Fabrication of IrSi3/p-Si Schottky diodes by a molecular beam epitaxy technique
- 14 May 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (20), 2013-2015
- https://doi.org/10.1063/1.103002
Abstract
IrSi3/p‐Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 °C. Good surface morphology was observed for IrSi3 layers grown at temperatures below 680 °C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current‐voltage characteristics were observed and Schottky barrier heights of 0.14–0.18 eV were determined by activation energy analysis and spectral response measurement.Keywords
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