Influence of ionized impurities on the linewidth of intersubband transitions in GaAs/GaAlAs quantum wells
- 27 April 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (17), 2121-2122
- https://doi.org/10.1063/1.107082
Abstract
In this letter, we report the influence of silicon donors on the linewidth of intersubband transitions 1–2 in GaAs/Ga0.75Al0.25As square quantum wells. We clearly demonstrate that the relative position between the ionized impurities and the center of the quantum wells is a major factor on the linewidth of the mid‐infrared (10 μm) transitions. Besides, it is shown that the scattering processes are more influenced by temperature when donors are far from the quantum well (QW).Keywords
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