Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices
- 1 July 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (1), 54-56
- https://doi.org/10.1063/1.96402
Abstract
The density of radiation-induced interface traps in a metal-oxide-semiconductor (MOS) device has been found to depend on the electrode material used to form the gate. For a given oxide process, this dependence correlates well with the gate-induced interfacial stress distribution in the MOS system. The gate-induced bond strain gradient model that we proposed previously may be readily used to explain the results.Keywords
This publication has 15 references indexed in Scilit:
- Gate-width dependence of radiation-induced interface traps in metal/SiO2/Si devicesApplied Physics Letters, 1983
- Radiation-Induced Defects in SiO2 as Determined with XPSIEEE Transactions on Nuclear Science, 1982
- XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 InterfaceIEEE Transactions on Nuclear Science, 1980
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976
- Oxide thickness dependence of electron-induced surface states in MOS structuresApplied Physics Letters, 1975
- Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitorsApplied Physics Letters, 1975
- Low energy electron irradiation of the Si-SiO2 interfaceThin Solid Films, 1972
- Model for Radiation-Induced Charge Trapping and Annealing in the Oxide Layer of MOS DevicesJournal of Applied Physics, 1969
- Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide InterfaceIEEE Transactions on Nuclear Science, 1969