A 30 GHz FET-Oscillator using Fin-Line Circuitry
- 1 October 1981
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The rapid progress in the semiconductor field has rendered possible the utilization of GaAs Field Effect Transistors for oscillator applications in the mm-wave range. Recently quasi planar line structures, like fin-line, have been investigated. Based on this know-how, a 30 GHz fin-line FET-Oscillator has been developed. 3 mW of output power were achieved with a corresponding DC-RF efficiency of nearly 4 %.Keywords
This publication has 2 references indexed in Scilit:
- A 69 GHz FET OscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 23-GHz Band GaAs MESFET Reflection-Type AmplifierIEEE Transactions on Microwave Theory and Techniques, 1979