The effect of rapid early growth on the physical and electrical properties of heteroepitaxial silicon
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 274-283
- https://doi.org/10.1016/0022-0248(75)90141-4
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- A survey of the heteroepitaxial growth of semiconductor films on insulating substratesJournal of Crystal Growth, 1974
- A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and SpinelJournal of the Electrochemical Society, 1974
- The development of a dual rate technique for the growth of silicon-on-sapphire filmsJournal of Crystal Growth, 1972
- Silicon on spinel: The interaction between deposition constituents and the substrate surfaceJournal of Crystal Growth, 1972
- Surface charge effects on the resistivity and Hall coefficient of thin silicon-on-sapphire filmsApplied Physics Letters, 1972
- The epitaxial growth and properties of p-type silicon on spinel using a dual-rate deposition techniqueJournal of Crystal Growth, 1972
- The preparation and properties of chemically vapor deposited silicon on sapphire and spinelJournal of Crystal Growth, 1971
- A Comparison of the Hole Mobility and Early Growth of Epitaxial Silicon on Flame Fusion, Flux, and Czochralski SpinelJournal of the Electrochemical Society, 1971
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970
- Measurement of Film Thickness Using Infrared InterferenceReview of Scientific Instruments, 1967