Photoluminescence of undoped (100) InP homoepitaxial films grown by molecular beam epitaxy
- 1 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (7), 481-483
- https://doi.org/10.1063/1.91204
Abstract
A comparative study is given of the photoluminescence properties between undoped (100) InP homoepitaxial MBE and LPE films and bulk crystals. All of the samples show two peaks; one is a near band‐edge emission at 1.41 eV with a small shoulder and the other is at about 1.13 eV. It is shown that the MBE films have a near band‐edge emission with intensity comparable with the LPE films, and exhibit a smaller amount of deep‐level emission than the LPE films and bulk crystals.Keywords
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