Minority carrier reflecting properties of semiconductor high-low junctions
- 31 August 1975
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (7-8), 715-716
- https://doi.org/10.1016/0038-1101(75)90144-6
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Effects of base doping and width on the JV characteristics of the n+−n−p+ structureSolid-State Electronics, 1972
- Forward current—Voltage and switching characteristics of p+-n-n+(epitaxial) diodesIEEE Transactions on Electron Devices, 1969
- On Carrier Accumulation, and the Properties of Certain Semiconductor Junctions†Journal of Electronics and Control, 1958