Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures
- 15 May 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (10), 6890-6891
- https://doi.org/10.1103/physrevb.31.6890
Abstract
The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference.
Keywords
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