Native Defects and Impurities in Cubic and Wurtzite Gan
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of thedelectronsPhysical Review B, 1993
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) siliconApplied Physics Letters, 1991
- Efficient pseudopotentials for plane-wave calculationsPhysical Review B, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Electronic structures and doping of InN, N, and NPhysical Review B, 1989
- Perspective On Gallium NitrideMRS Proceedings, 1989
- Special points for Brillouin-zone integrationsPhysical Review B, 1976
- High pressure solution growth of GaNJournal of Crystal Growth, 1975