Leakage current mechanisms in Hydrogen-passivated fine-grain polycrystalline Silicon on insulator MOSFET's
- 1 October 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (10), 1518-1528
- https://doi.org/10.1109/t-ed.1986.22702
Abstract
In this paper we identify various sources of leakage current in thin-film silicon on insulator (SOI) MOSFET's made in hydrogen-passivated small-grain polycrystalline silicon. The action of a parasitic bipolar transistor that can amplify the leakage current due to the thermally generated carriers has been confirmed and characterized. A current gain (β) of more than 6 for the parasitic bipolar transistor has been experimentally measured in accumulation-mode devices, in spite of the presence of a large number of defects. This high gain is attributed to the presence of the vertical electric field, which separates the carriers, thus reducing the probability of recombination. The presence of field-enhanced generation is shown to be the cause of the observed increase in the leakage current with positive front- or back-gate bias for p-channel accumulation-mode devices. Reasonable agreement has been obtained between experimental data and theory based on field-enhanced generation due to Poole-Frenkel barrier lowering.Keywords
This publication has 19 references indexed in Scilit:
- Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline SiliconIEEE Transactions on Electron Devices, 1985
- Polysilicon transistors in VLSI MOS memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- High-gain photodetectors in thin-film transistors fabricated from laser-crystallized silicon on fused silicaPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- p-Channel MOSFET's in LPCVD PolySiliconIEEE Electron Device Letters, 1983
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- Full isolation technology by porous oxidized silicon and its application to LSIsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Subthreshold conduction in MOSFET'sIEEE Transactions on Electron Devices, 1978
- Properties of ESFI MOS transistors due to the floating substrate and the finite volumeIEEE Transactions on Electron Devices, 1975
- Influence of the floating substrate potential on the characteristics of ESFI MOS transistorsSolid-State Electronics, 1975
- Oxidation-induced stacking faults in silicon. II. Electrical effects in P N diodesJournal of Applied Physics, 1974