Dynamical Model for the Absorption and Scattering of Ballistic Phonons by the Electron Inversion Layer in Silicon
- 19 December 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (25), 2302-2305
- https://doi.org/10.1103/physrevlett.51.2302
Abstract
A new, dynamical model is presented which can explain the anomalously strong attenuation reported for ballistic phonons propagating through the (001) inversion layer of Si. The crux is an interference effect between phonon amplitudes backscattered from the two-dimensional electron gas and amplitudes specularly reflected from the Si-Si interface.
Keywords
This publication has 6 references indexed in Scilit:
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