Type conversion, contacts, and surface effects in electroplated CdTe films
- 15 November 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (10), 3809-3813
- https://doi.org/10.1063/1.335595
Abstract
Efficient electroplated CdS/CdTe solar cells can be fabricated by heat treating and type-converting the n-CdTe films deposited on CdS layers. In this paper, various mechanisms which may give rise to the conversion of electroplated CdTe films from n to p type are investigated. It is concluded that Cd-vacancy generation is the main mechanism of type conversion. Possible effects of oxygen on this mechanism are also discussed. Evaporated Au contacts to electroplated p-CdTe films were studied. It was found that the Au contacts depleted the excess Te present on the surface of Br2-methanol etched p-CdTe films. Oxygen was found to affect the electrical characteristics of such contacts.Keywords
This publication has 11 references indexed in Scilit:
- Optical properties of electrochemically deposited CdTe filmsJournal of Applied Physics, 1984
- Hole traps in p-type electrochemically deposited CdTe thin filmsJournal of Applied Physics, 1984
- Current transport mechanisms of electrochemically deposited CdS/CdTe heterojunctionSolid-State Electronics, 1984
- High-efficiency electroplated heterojunction solar cellJournal of Applied Physics, 1984
- High-efficiency electrodeposited cadmium telluride solar cellsApplied Physics Letters, 1982
- Low resistance contacts to p-type cadmium tellurideJournal of Electronic Materials, 1982
- Determination of trap parameters in electrodeposited CdTe by schottky barrier capacitance measurementsThin Solid Films, 1981
- Observation of electron traps in electrochemically deposited CdTe filmsSolid-State Electronics, 1981
- Cathodic Deposition of CdTe from Aqueous ElectrolytesJournal of the Electrochemical Society, 1978
- Ohmic contact and impurity conduction in P−doped CdTeJournal of Applied Physics, 1975