Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications
- 22 July 2005
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 23 (5), 1309-1313
- https://doi.org/10.1116/1.1953687
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Electrical current distribution across a metal–insulator–metal structure during bistable switchingJournal of Applied Physics, 2001
- Reproducible switching effect in thin oxide films for memory applicationsApplied Physics Letters, 2000
- Electric-pulse-induced reversible resistance change effect in magnetoresistive filmsApplied Physics Letters, 2000
- Current switching of resistive states in magnetoresistive manganitesNature, 1997
- Electroforming and Switching in Oxides of Transition Metals: The Role of Metal–Insulator Transition in the Switching MechanismJournal of Solid State Chemistry, 1996
- Electroluminescence, Bistable Switching, and Dielectric Breakdown of Nb2O5 DiodesJournal of Vacuum Science and Technology, 1969
- Switching phenomena in titanium oxide thin filmsSolid-State Electronics, 1968
- Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al–Al2O3–Au DiodesJournal of Applied Physics, 1965
- BISTABLE SWITCHING IN NIOBIUM OXIDE DIODESApplied Physics Letters, 1965
- Avalanche-Induced Negative Resistance in Thin Oxide FilmsJournal of Applied Physics, 1965