Magnetic field control of reactive plasma etching

Abstract

The application of a magnetic field to control the spatial distribution of chemical species in reactive plasma etching produces a situation in which either etching or deposition can occur. In a low‐voltage hot‐filament triode configuration in which the plasma is confined by an externally applied magnetic field, Si samples are subjected to a CF₄ plasma. Etching or deposition of a cross‐linked fluorocarbon polymer can occur, depending on the position of the sample with respect to the core of the discharge. These results are generally applicable to all reactive plasma‐etching reactors.