Metastable As-concentrations in Si achieved by ion implantation and rapid thermal annealing
- 1 January 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (1), 230-232
- https://doi.org/10.1063/1.328482
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The solid solubility and thermal behavior of metastable concentrations of As in SiApplied Physics Letters, 1980
- Solid solubility of As in Si as determined by ion implantation and cw laser annealingApplied Physics Letters, 1979
- Metastable 75As concentrations formed by scanned cw e-beam annealing of 75As-implanted siliconApplied Physics Letters, 1979
- Incorporation of implanted In and Sb in silicon during amorphous layer regrowthJournal of Applied Physics, 1979
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Repeated Removal of Thin Layers of Silicon by Anodic OxidationJournal of the Electrochemical Society, 1976
- Technique used in Hall effect analysis of ion implanted Si and GeSolid-State Electronics, 1970