Metastable 75As concentrations formed by scanned cw e-beam annealing of 75As-implanted silicon
- 15 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (2), 114-116
- https://doi.org/10.1063/1.91060
Abstract
The incorporation of 75As into substitutional lattice sites in silicon in excess of 1021 cm−3 is reported. This has been accomplished by both a scanned cw e‐beam and a scanned cw laser operating with dwell times in the range of milliseconds. Both electron concentration (using differential van der Pauw) and atom location measurements (using MeV ion channeling) are reported. Standard thermal processing indicates that these layers are metastable.Keywords
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