LIFETIME AND CONDUCTIVITY MEASUREMENTS ON CLEAN GERMANIUM SURFACES
- 1 January 1963
- journal article
- Published by Wiley in Annals of the New York Academy of Sciences
- Vol. 101 (3), 915-927
- https://doi.org/10.1111/j.1749-6632.1963.tb54947.x
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- FIELD EMISSION: A TOOL FOR STUDYING SEMICONDUCTOR SURFACESAnnals of the New York Academy of Sciences, 1963
- Field emission from silicon and germanium; field desorption and surface migrationJournal of Physics and Chemistry of Solids, 1961
- Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type SemiconductorPhysical Review B, 1961
- Effect of Chemical Etches on the Fast Germanium Surface StatesThe Journal of Chemical Physics, 1960
- p Layers on Vacuum Heated SiliconJournal of Applied Physics, 1960
- The electrical structure of semiconductor surfacesJournal of Physics and Chemistry of Solids, 1959
- Surface States on Silicon and Germanium SurfacesPhysical Review B, 1956
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955
- -Type Surface Conductivity on-Type GermaniumPhysical Review B, 1953