Development and applications of field emitter arrays in Japan
- 1 February 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 111, 194-203
- https://doi.org/10.1016/s0169-4332(96)00845-8
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Control of emission characteristics of silicon field emitter arrays by an ion implantation techniqueJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Emission Characteristics of Ion-Implanted Silicon Emitter TipsJapanese Journal of Applied Physics, 1995
- Experimental study of field emission properties of the Spindt-type field emitterJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Silicon Field Emitter Capable of Low Voltage EmissionJapanese Journal of Applied Physics, 1993
- Investigation of Cathodoluminescent Display Device with Field Emission CathodesJapanese Journal of Applied Physics, 1993
- Influences of gases on the field emissionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Vacuum microelectronics-1992Journal of Micromechanics and Microengineering, 1992
- Vacuum microelectronics: what's new and excitingIEEE Transactions on Electron Devices, 1991
- Field-emitter arrays for vacuum microelectronicsIEEE Transactions on Electron Devices, 1991
- Physical properties of thin-film field emission cathodes with molybdenum conesJournal of Applied Physics, 1976