Structural and optical studies on molecular beam epitaxially grown (InAs)m(AlAs)m and (InAs)m(GaAs)m short-period strained layer superlattices
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 202-205
- https://doi.org/10.1016/0022-0248(89)90383-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A comparison of the electronic properties of thin-period (InAs)(GaAs) and (InAs)(AlAs) superlattices with compositionally similar random alloysIEEE Transactions on Electron Devices, 1987
- An effective dipole theory for band lineups in semiconductor heterojunctionsJournal of Applied Physics, 1987
- Electron and hole mobility in modulation doped GaInAs-AlInAs strained layer superlatticeJournal of Crystal Growth, 1987
- Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular-beam epitaxy: Consequences for optical and transport propertiesJournal of Applied Physics, 1986
- Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxyApplied Physics Letters, 1986
- High-mobility two-dimensional electron gas in modulation-doped InAlAs/InGaAs heterostructuresSurface Science, 1986
- Luminescence investigations of highly strained-layer InAs-GaAs superlatticesApplied Physics Letters, 1986
- Temperature dependence of electron mobility in (InAs)3(GaAs)1 superlatticesApplied Physics Letters, 1986
- A New High-Electron Mobility Monolayer SuperlatticeJapanese Journal of Applied Physics, 1983