CuInS2 thin films: Preparation and properties
- 1 November 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (11), 4865-4869
- https://doi.org/10.1063/1.321521
Abstract
The growth and electrical properties of CuInS2 thin films are described. Two deposition schemes, single‐ and double‐source methods, are reported. Data are presented indicating the effects of film and substrate temperature on the electrical characteristics (mobility, resistivity, and carrier concentration) of the films. Both n‐ and p‐type films are reported, and the effects of sulfur concentrations are discussed. Some postdeposition annealing effects are also detailed.Keywords
This publication has 21 references indexed in Scilit:
- Solid solution formation in the systems CuMIIIX2-AgMIIIX2 where MIII=Al, Ga, In and X2=S, SeJournal of Physics and Chemistry of Solids, 1973
- Direct Observation of CuLevels in I-III-CompoundsPhysical Review Letters, 1972
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972
- Visible Cathodoluminescence of AgGaS2, a I-III-VI2 Chalcopyrite CompoundApplied Physics Letters, 1972
- Optical and Electrical Properties of AgGaand AgGaPhysical Review B, 1971
- Electrical Properties, Optical Properties, and Band Structure of CuGaand CuInPhysical Review B, 1971
- Silver thiogallate, a new material with potential for infrared devicesOptics Communications, 1971
- Preparation and properties of single crystal CuAlS2 and CuAlSe2Journal of Physics and Chemistry of Solids, 1969
- CuGaSe2 and AgInSe2: Preparation and properties of single crystalsJournal of Physics and Chemistry of Solids, 1966
- Untersuchungen über ternäre Chalkogenide. V. Über einige ternäre Chalkogenide mit ChalkopyritstrukturZeitschrift für anorganische und allgemeine Chemie, 1953