Titration Method for Measuring Fluorine Atom Concentration in Microwave Plasma Etching
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (1R)
- https://doi.org/10.1143/jjap.22.139
Abstract
A titration method has seen developed to measure the concentration of fluorine (F) atom in microwave plasma etching. A rapid reaction of F atoms with H2 gas is used as a titration reaction to determine the absolute F atom concentration. Applying the present method to SF6 microwave discharge, the F atom concentration is measured under various discharge conditions. The F atom concentration is 2.9-4.0×1011 cm-3 at a typical operating pressure of 6.7×10-2 Pa and a microwave power of 200 W. It is confirmed that relative changes in the concentration agree well with those obtained with the optical spectroscopic method.Keywords
This publication has 12 references indexed in Scilit:
- The reaction of fluorine atoms with siliconJournal of Applied Physics, 1981
- Dependence of F atom density on pressure and flow rate in CF4 glow discharges as determined by emission spectroscopyJournal of Vacuum Science and Technology, 1981
- The temperature dependence of absolute rate constants for the F+H2 and F+D2 reactionsThe Journal of Chemical Physics, 1980
- The Roles of Ions and Neutral Active Species in Microwave Plasma EtchingJournal of the Electrochemical Society, 1979
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- Microwave Plasma EtchingJapanese Journal of Applied Physics, 1977
- The Loading Effect in Plasma EtchingJournal of the Electrochemical Society, 1977
- Heterogeneous fluorine atom recombination/reaction on several materials of constructionAIAA Journal, 1976
- PNO-CI and PNO-CEPA studies of electron correlation effectsMolecular Physics, 1976