A 3-D vertical hall magnetic-field sensor in CMOS technology
- 31 July 1992
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 34 (1), 9-14
- https://doi.org/10.1016/0924-4247(92)80133-n
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- 3-D Magnetic field sensor realized as a lateral magnetotransistor in cmos technologySensors and Actuators A: Physical, 1990
- 2-D magnetic field sensor based on vertical Hall devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Influence of surface effects on the sensitivity of magnetic-field sensorsCanadian Journal of Physics, 1989
- Three-dimensional magnetic-field sensorsIEEE Transactions on Electron Devices, 1988
- Integrated 3-D Magnetic sensor based on an n-p-n transistorIEEE Electron Device Letters, 1986
- The vertical hall-effect deviceIEEE Electron Device Letters, 1984
- Magnetic-field-sensitive multicollector n-p-n transistorsIEEE Transactions on Electron Devices, 1982