The vertical hall-effect device
- 1 September 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (9), 357-358
- https://doi.org/10.1109/edl.1984.25945
Abstract
A novel device, sensitive to the magnetic field parallel to the chip surface is described. The device has a form remeniscent of a semi circular plate placed perpendicularly to the chip plane. The operation principle is that of the conventional Hall-effect device. The unusual geometry principally does not affect sensitivity. The experimental samples are fabricated using a standard bulk CMOS technology, where the p-well deep diffusion is used to surround the active device volume. Sensitivity up to 450 V/AT is measured.Keywords
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