Analysis of Breakdown Phenomena in MOSFET's
- 1 April 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 1 (2), 77-85
- https://doi.org/10.1109/tcad.1982.1269997
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- A two-dimensional model of the avalanche effects in MOS transistorsSolid-State Electronics, 1982
- Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctionsIEEE Transactions on Electron Devices, 1975
- Threshold energy effect on avalanche breakdown voltage in semiconductor junctionsSolid-State Electronics, 1975
- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Charge multiplication in silicon p-n junctionsSolid-State Electronics, 1963
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Ionization Rates for Electrons and Holes in SiliconPhysical Review B, 1958
- Theory of the Flow of Electrons and Holes in Germanium and Other SemiconductorsBell System Technical Journal, 1950