H-MESFET compatible GaAs/AlGaAs MSM photodetector
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (7), 660-662
- https://doi.org/10.1109/68.87946
Abstract
GaAs/Al/sub 0.3/Ga/sub 0.7/As short wavelength metal-semiconductor-metal photodetectors (MSM-PDs), compatible with GaAs heterostructure MESFET technologies have been fabricated. Detector bandwidths greater than 3.5 GHz were observed for lambda =800-850 nm. Due to the GaAs/AlGaAs heterojunction, low-frequency gain which is observed in GaAs MSM-PDs was minimized. The internal quantum efficiency was close to 100% and the dark currents were less than 1 nA for large-area detectors.Keywords
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