Optoelectronic and structural properties of sputter etched surfaces of InP
- 22 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (12), 719-721
- https://doi.org/10.1063/1.97578
Abstract
The effects of sputter etching on the optoelectronic and structural properties of 〈100〉 surfaces of InP were investigated by photoluminescence (PL) and Raman scattering in conjunction with capacitance-voltage determinations of the density of surface state Nss. The surfaces were etched in an Ar+ plasma for 5 min with plasma power densities D up to 0.1 W cm−2. The near band edge PL intensity shows a striking dependence on D. Below the threshold for macroscopic structural damage, the behavior of the PL and the Nss are independent of each other. A movement of the Fermi level at the surface is invoked in order to explain the PL response.Keywords
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