Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP
- 4 March 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (9), 968-970
- https://doi.org/10.1063/1.104458
Abstract
Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111̄) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates.Keywords
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