Temperature characteristics of (InAs)1/(GaAs)4 short-period superlattices quantum well laser
- 26 April 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (17), 2018-2020
- https://doi.org/10.1063/1.109521
Abstract
The temperature characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analyzed both experimentally and theoretically. The measured threshold current density as a function of temperature is characterized by a T0=135 K for 115 K<TT0=47 K for 420 K<T<480 K. The radiative and nonradiative recombination rates and the gain versus carrier density relationship in monolayer superlattice structures are calculated. Inclusion of the nonradiative recombination process is necessary to explain the observed high‐temperature characteristics of these lasers.Keywords
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