Low Temperature Epitaxial Growth of Highly-Conductive ZnSe Layers in Mixed Plasma of Hydrogen and Hydrogen Chloride
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6A), L893
- https://doi.org/10.1143/jjap.26.l893
Abstract
Highly conductive ZnSe layers with resistivitv of 10-3 Ω·cm (electron density: 2.8×1019 cm-3, Hall mobility: 140 cm2/Vs) have been grown on (100)GaAs by plasma-assisted epitaxy at 318°C in a mixed plasma of hydrogen and HCl. However, photoluminescent measurements suggest that excessive doping above 1019 cm-3 reduce the conductivity from its maximum value by inducing complex defects.Keywords
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