Heavily Te-Doped GaAs Layers by Plasma-Assisted Epitaxy
- 1 September 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (9A), L602
- https://doi.org/10.1143/jjap.22.l602
Abstract
N-type GaAs layers, which were heavily doped with Te above 2×1019 cm-3, were epitaxially grown on (100)GaAs at a substrate temperature around 550°C by plasma-assisted epitaxy. These n+-GaAs layers showed mirror faced surface and their Hall mobilities were about 900 cm2/Vsec. These characteristics were not changed by annealing at 550°C for 10 min. The present technology has potential use for the formation of non-alloyed ohmic contacts.Keywords
This publication has 8 references indexed in Scilit:
- Ge Incorporation in GaAs Grown by Molecular Beam Epitaxy: A Thermodynamic StudyJournal of the Electrochemical Society, 1982
- Plasma-assisted deposition and epitaxy of GaAs filmsThin Solid Films, 1981
- Nonalloyed ohmic contacts to electron-beam-annealed Se-ion-implanted GaAsApplied Physics Letters, 1980
- Pulsed electron-beam annealing of selenium-implanted gallium arsenideApplied Physics Letters, 1979
- Nonalloyed Ohmic contacts to n-GaAs by pulse-electron-beam-annealed selenium implantsApplied Physics Letters, 1979
- Nonalloyed and i n s i t u Ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistorsJournal of Applied Physics, 1979
- I n s i t u Ohmic-contact formation to n- and p-GaAs by molecular beam epitaxyApplied Physics Letters, 1978
- Nonalloyed Ohmic contacts to n-GaAs by molecular beam epitaxyApplied Physics Letters, 1978