High quality Hg1−xCdxTe epitaxial layers by the organometallic process

Abstract

An organometallic process for the epitaxial growth of Hg_1−xCd_xTe is described in this letter. This process involves the simultaneous pyrolysis of dimethylcadmium and diethyltelluride in mercury vapor at 415 °C, using hydrogen as the carrier gas. It is shown this process results in device quality layers of uniform composition. Layers with x=0.17 exhibited n‐type conduction, with an approximate carrier concentration of 3.8×10¹⁵ cm⁻³, and a Hall mobility of 2.45×10⁵ cm²/Vs at 77 K. Thus, they are comparable to the best grown by liquid phase epitaxy. A p‐type layer, with anomalous electrical characteristics, has also been described in this letter. Reasons for these anomalous characteristics are outlined briefly.