Frequency-Dependent Cyclotron Effective Masses in Si Inversion Layers
- 13 October 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 35 (15), 1031-1034
- https://doi.org/10.1103/physrevlett.35.1031
Abstract
A marked frequency dependence of the far-infrared cyclotron effective mass of inversion-layer electrons in a Si metal-oxide-semiconductor device has been observed for the first time. A qualitative interpretation of these data in terms of electron-electron interactions is presented.Keywords
This publication has 7 references indexed in Scilit:
- Effective Mass andFactor of Interacting Electrons in the Surface Inversion Layer of SiliconPhysical Review Letters, 1975
- Subharmonic structure of cyclotron resonance an inversion layer on SiSolid State Communications, 1974
- Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. I. Characteristics of Level Broadening and Transport under Strong FieldsJournal of the Physics Society Japan, 1974
- Far-Infrared Cyclotron Resonance in the Inversion Layer of SiliconPhysical Review Letters, 1974
- Electron-Electron Interactions Continuously Variable in the RangePhysical Review Letters, 1972
- Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent BondPhysical Review B, 1965
- Cyclotron Resonance and de Haas-van Alphen Oscillations of an Interacting Electron GasPhysical Review B, 1961