Interband scattering effects on secondary ionization coefficients in GaAs
- 1 February 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (2), 331-340
- https://doi.org/10.1016/0038-1101(78)90262-9
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Unequal electron and hole impact ionization coefficients in GaAsApplied Physics Letters, 1974
- Ionization rate in GaAs determined from photomultiplication in a Schottky barrierJournal of Applied Physics, 1973
- Theoretical and experimental study of GaAs IMPATT oscillator efficiencyJournal of Applied Physics, 1973
- Ionization Rates in (AlxGa1−x)AsJournal of Applied Physics, 1970
- Temperature Dependence of Ionization Rates in GaAsJournal of Applied Physics, 1969
- Avalanche breakdown of gallium arsenidep-njunctions†International Journal of Electronics, 1968
- The Effective Ionization Rate for Hot Carriers in GaAs†International Journal of Electronics, 1966
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962