Switching characteristics of hydrogenated amorphous silicon/crystalline silicon heterojunction devices
- 12 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (11), 1034-1036
- https://doi.org/10.1063/1.102607
Abstract
A new structure of a three-terminal hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction switching device is successfully developed. The device can be controlled by a gate bias. The switching voltage, holding voltage, and switching current all increase with an increase of undoped a-Si:H thickness. The electrical characteristics and switching phenomena of this device are discussed.Keywords
This publication has 10 references indexed in Scilit:
- Amorphous Si/Si heterojunction microwave transistorsIEEE Electron Device Letters, 1989
- Reverse Current Characteristics of Hydrogenated Amorphous Silicon-Crystalline Silicon HeterojunctionsJapanese Journal of Applied Physics, 1987
- The switching mechanism in amorphous silicon junctionsJournal of Non-Crystalline Solids, 1985
- An amorphous SiC:H emitter heterojunction bipolar transistorIEEE Electron Device Letters, 1985
- Theory of switching in polysilicon n-p+ structuresSolid-State Electronics, 1984
- Optoelectrical properties of amorphous-crystalline silicon heterojunctionsApplied Physics Letters, 1984
- Electrical properties of n-amorphous/p-crystalline silicon heterojunctionsJournal of Applied Physics, 1984
- Memory switching in amorphous silicon devicesJournal of Non-Crystalline Solids, 1983
- Amorphous Si/Polycrystalline Si Stacked Solar Cell Having More Than 12% Conversion EfficiencyJapanese Journal of Applied Physics, 1983
- Switching in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1982