Modeling of 10-nm-scale ballistic MOSFET's

Abstract

We have performed numerical modeling of nanoscale dual-gate ballistic n-MOSFET's with ultrathin undoped channel, taking into account the effects of quantum tunneling along the channel and through the gate oxide. The results show that transistors with channel length as small as 8 nm can exhibit either a transconductance up to 4000 mS/mm or gate modulation of current by more than 8 orders of magnitude, depending on the gate oxide thickness. These characteristics make the sub-10-nm devices potentially suitable for logic and memory applications, though their parameters are rather sensitive to size variations.