Nanoscale field-effect transistors: An ultimate size analysis
- 22 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (25), 3661-3663
- https://doi.org/10.1063/1.120473
Abstract
We have used a simple, analytically solvable model to analyze the characteristics of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10 nm-scale channel length . The model assumes ballistic dynamics of two-dimensional electrons in an undoped channel between highly doped source and drain. When applied to silicon -MOSFETs, calculations show that the voltage gain (necessary for logic applications) drops sharply at while the conductance modulation remains sufficient for memory applications until
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