Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon
- 1 October 1977
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 14 (2), 189-191
- https://doi.org/10.1007/bf00883088
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Laser-induced damage to semiconductorsJournal of Physics D: Applied Physics, 1976
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Role of Surface Treatment in Laser Damage of GermaniumJournal of Applied Physics, 1971
- Effects Due to Absorption of Laser RadiationJournal of Applied Physics, 1965