High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator
- 1 April 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (4S)
- https://doi.org/10.1143/jjap.46.2309
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- RF and DC characteristics in Al2O3/Si3N4 insulated‐gate AlGaN/GaN heterostructure field‐effect transistors with regrown ohmic structurePhysica Status Solidi (a), 2006
- Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layerSolid-State Electronics, 2006
- AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire SubstratesJapanese Journal of Applied Physics, 2005
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier LayersJapanese Journal of Applied Physics, 2004
- AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivationApplied Physics Letters, 2003
- Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistorsApplied Physics Letters, 2002
- Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistorsApplied Physics Letters, 2001
- High breakdown GaN HEMT with overlapping gate structureIEEE Electron Device Letters, 2000
- AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substratesApplied Physics Letters, 2000
- Electrical characterization of GaN p-n junctions with and without threading dislocationsApplied Physics Letters, 1998