Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
- 12 September 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (11), 1421-1423
- https://doi.org/10.1063/1.112070
Abstract
We report the direct deposition of strained InGaAs-dot structures with a diameter of about 15 nm on GaAs surfaces by metalorganic chemical vapor deposition growth. High resolution scanning electron micrographs show highly uniform quantum-sized dots formed by the Stranski–Krastanow growth mode. The sharp photoluminescence emission band of buried dot structures indicates efficient carrier capture and a homogeneous heterointerface. The average dot size and area dot density can be controlled accurately by growth temperature, and InGaAs deposition thickness, respectively.Keywords
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