Electronic states in lateral structures on modulation-doped heterointerfaces

Abstract

The electronic states in an AlGaAs-GaAs modulation-doped heterointerface with a lateral structure of order 10 nm are analyzed self-consistently. The structure is realized by using a fractional layer superlattice. Resonant gaps appear in the electron state band diagram because the potential cannot be expressed as a sum of the functions of two directions. The electron channel location strongly depends on which subband the electron belongs to.