Aging effects in Si-doped Al Schottky barrier diodes
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (3), 152-154
- https://doi.org/10.1063/1.88677
Abstract
Schottky barrier diodes made with Si‐doped Al metallization on n‐type Si exhibit aging at temperatures between 200 and 300 °C. The barrier height of these devices depends on the square root of time. A crystallized layer of Si on the devices, grown from the Al‐Si metal, contains a certain amount of Al, which acts as a p‐type dopant. The aging of the diodes is a direct result of variations in the amount of this Al, about which information can therefore be inferred from the kinetics of the aging process. The results are compared to those for pure Al Schottky contacts to Si, which do not age with time at these temperatures.Keywords
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