Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures
- 1 November 1990
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 5 (11), 2497-2501
- https://doi.org/10.1557/jmr.1990.2497
Abstract
Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Schottky diodes and the diamond film. Internal photoemission measurements yielded a barrier height of 1.15 eV. A comparison of experimental data for metal contacts to free-standing diamond films and those on silicon substrates indicates that both rectification and internal photoemission originate at the metal/diamond interface.Keywords
This publication has 13 references indexed in Scilit:
- Schottky diodes with thin film diamond basePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989
- The barrier height of Schottky diodes with a chemical-vapor-deposited diamond baseJournal of Applied Physics, 1989
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- Summary Abstract: Device applications of diamondsJournal of Vacuum Science & Technology A, 1988
- Crystallization of diamond crystals and films by microwave assisted CVD (Part II)Materials Research Bulletin, 1988
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Bipolar transistor action in ion implanted diamondApplied Physics Letters, 1982
- Schottky barriers on diamond (1 1 1)Solid State Communications, 1980
- The C-V characteristics of Schottky barriers on laboratory grown semiconducting diamondsSolid-State Electronics, 1973