The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental
- 1 June 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 19 (6), 713-718
- https://doi.org/10.1109/t-ed.1972.17486
Abstract
Experimental measurements of the gain distribution and noise spectral density of silicon avalanche photodiodes are presented and compared with McIntyre's theories [7], [8]. Excellent agreement is obtained using keff, the effective ratio of the hole and electron ionization coefficients, as the only adjustable parameter.Keywords
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