The face dependence of the emission of electrons from GaAs activated to negative electron affinity
- 1 April 1977
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 10 (5), 721-727
- https://doi.org/10.1088/0022-3727/10/5/013
Abstract
The emission probability of Gamma electrons is calculated for the (100) and (110) faces of negative electron affinity GaAs. Together with previously published results for the other major faces ((1,1,1)A and (1,1,1)B) (Burt and Inkson, ibid., vol.9, p.43 (1975)) the data are discussed in terms of simple models to explain the calculated variation. The large difference between the experimental and theoretical results for the (110) face is found to have a ready explanation in terms of a microscopic model for the surface recombination velocity.Keywords
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