Crystal orientation dependence of ionization rates in germanium

Abstract

Ionization rates in 〈111〉 and 〈100〉 germanium are determined experimentally. The ionization rates obtained are expressed as α=2.72×10⁶ exp(−1.1×10⁶/E), β=1.72×10⁶ exp(−9.37×10⁵/E) for 〈111〉 and α=8.04×10⁶ exp(−1.4×10⁶/E), β=6.39×10⁶ exp(−1.27×10⁶ /E) cm⁻¹ for 〈100〉 where α and β are ionization rates for electrons and holes, respectively, and E is the electric field. Hole‐ to electron‐ionization‐rate ratios of 〈100〉 Ge are found to be greater than those of 〈111〉 Ge. The multiplication noise power of Ge avalanche photodiodes calculated by using the ionization rates obtained shows good agreement with experimental results.