Impurity-stimulated crystallization and diffusion in amorphous silicon
- 8 February 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (6), 439-441
- https://doi.org/10.1063/1.99436
Abstract
An amorphous-to-polycrystalline silicon transformation and concomitant In redistribution have been observed in In-implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In-rich precipitates in amorphous silicon.Keywords
This publication has 12 references indexed in Scilit:
- Formation of stable dopant interstitials during ion implantation of siliconJournal of Materials Research, 1986
- Effects of Impurities on the Kinetics of Nucleation and Growth in Amorphous SiliconMRS Proceedings, 1986
- Crystallization of Indium Implanted Amorphous SiliconMRS Proceedings, 1986
- Diffusion and precipitation in amorphous SiApplied Physics Letters, 1985
- Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.MRS Proceedings, 1985
- Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in SiliconMRS Proceedings, 1984
- Epitaxial recrystallisation of gallium implanted (100) siliconNuclear Instruments and Methods in Physics Research, 1983
- Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) siliconApplied Physics Letters, 1982
- Limits to solid solubility in ion implanted siliconNuclear Instruments and Methods, 1981
- Supersaturated solid solutions after solid phase epitaxial growth in Bi-implanted siliconApplied Physics Letters, 1980