Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation
- 1 September 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (9S), 6981
- https://doi.org/10.1143/jjap.44.6981
Abstract
We have found excellent electrical characteristics in germanium oxide grown by plasma oxidation for germanium metal-insulator-semiconductor gate dielectric applications. An oxygen plasma stream generated by electron cyclotron resonance was used to oxidize a germanium surface without substrate heating. A transmission electron microscope observation revealed that the obtained germanium oxide/germanium interface is atomically smooth. The energy distribution of interface trap density (D it) in the upper half of the p-type germanium band gap was measured by the ac conductance method. It is shown that the D it at the midgap is ∼6 ×1010 cm-2·eV-1 and increases exponentially as the energy increases to the conduction-band edge.Keywords
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