Radiation Defects in n-Type Germanium Studied by Deep Level Transient Spectroscopy
- 1 July 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (7), L519-522
- https://doi.org/10.1143/jjap.20.l519
Abstract
Defect levels produced in n-type germanium by 1.5 MeV electron irradiation and their annealing behaviour were studied by DLTS. Two electron traps located at E c-0.20 eV and E c-0.40 eV and a hole trap at E v+0.24 eV were found to be formed by the irradiation with introduction rates of 0.05/cm, 0.54/cm and 0.22/cm respectively. When the specimen was annealed at 370 K for 10 minutes, a considerable part of the E c-0.20 eV level was observed to be transformed into a new electron trap at E c-0.23 eV.Keywords
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