Degradation kinetics of GaAs quantum well lasers
- 26 June 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (26), 2683-2685
- https://doi.org/10.1063/1.101034
Abstract
Degradation-induced dark line defect growth velocities have been found to be inversely proportional to the operating temperature in quantum well lasers under current injection. A model has been developed, which considers the differing band structure and role of deep levels in quantum well structures as opposed to conventional double-heterostructure lasers. Our findings have significant implications for device yield since they suggest nontraditional screening strategies that recognize temperature as a decelerant for the sudden failure mode.Keywords
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