A neutron backscattering study of lattice deformations in silicon due to SiO2 precipitation
- 1 January 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (1), 533-539
- https://doi.org/10.1063/1.345239
Abstract
Czochralski‐grown dislocation free silicon crystals containing approximately 7.5, 9.9, and 18×1017 cm−3 oxygen atoms have been annealed at 750, 1050, and 1200 °C for times varying between 20 and 216 h. Neutron transmission spectra measured at reflection 111 in backscattering geometry reveal mean lattice contractions of the order of 5×10−5 and lattice parameter fluctuations up to Δd/d≊5×10−4. The measuring time for one spectrum is 15 min and an on‐line characterization of the defects produced during annealing is feasible. A combination of this technique with neutron small angle scattering, γ‐ray diffractometry, and diffraction experiments with high‐energy synchrotron radiation opens new possibilities for investigations of oxygen precipitation in silicon crystals as used in very‐large‐scale integration semiconductor device technology.Keywords
This publication has 11 references indexed in Scilit:
- Anisotropic small-angle neutron scattering from oxide precipitates in silicon single crystalsSemiconductor Science and Technology, 1989
- Test of annealed Czochralski grown silicon crystals as X-ray diffraction elements with 145 keV synchrotron radiationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- Amorphous oxide precipitates in silicon single crystalsNature, 1988
- Annealed Czochralski grown silicon crystals: A new material for the monochromatisation of synchrotron radiation and X-rays above 60 keVNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Coupled neutron – γ-ray diffraction: a method for accurate measurement of strains. Application to the study of the ferroelectric phase transition of KH2PO4Journal of Applied Crystallography, 1987
- Is enhanced interstitial oxygen diffusion necessary to explain the kinetics of precipitation in silicon at temperatures below 650 degrees C?Semiconductor Science and Technology, 1987
- High resolution studies of crystal mosaicity by means of double crystal γ-ray diffractometryJournal of Crystal Growth, 1986
- Rückstreuung von Neutronen an perfekten Silizium-EinkristallenThe European Physical Journal A, 1973
- Two new experimental diffraction methods for a precise measurement of crystal perfectionJournal of Crystal Growth, 1972
- A neutron crystal spectrometer with extremely high energy resolutionNuclear Instruments and Methods, 1971